TY - JOUR
T1 - A W-band photonic transmitter/mixer based on high-power near-ballistic uni-traveling-carrier photodiode (NBUTC-PD)
AU - Wu, Y. S.
AU - Chen, Nan Wei
AU - Shi, J. W.
N1 - Funding Information:
Manuscript received May 14, 2008; revised June 25, 2008. First published August 22, 2008; current version published October 15, 2008. This work was supported by the National Science Council of Taiwan under grant NSC-96-2221-E-008-121-MY3. The authors are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). Digital Object Identifier 10.1109/LPT.2008.2004689
PY - 2008
Y1 - 2008
N2 - In this letter, we demonstrate a W-band photonic transmitter/mixer fabricated by the flip-chip bonding of a high-power back-illuminated near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) and an end-fire quasi-Yagi antenna on an AlN substrate. This end-fire and directional antenna design eliminates the need for the integration of an additional Si-lens into the antenna for directional power transmission. The high bias dependent nonlinearity of the integrated NBUTC-PD means that the bias modulation technique can be used to directly up-convert the intermediate-frequency signal to a millimeter-wave signal at -band without using a costly high-speed optical modulator. A reasonable detected power (-17 dBm at 106 GHz) can be achieved with the demonstrated device with a high-output photocurrent (30 mA) and a low internal-conversion loss (-2.4 dB) between the radio-frequency and local-oscillator signals at -band.
AB - In this letter, we demonstrate a W-band photonic transmitter/mixer fabricated by the flip-chip bonding of a high-power back-illuminated near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) and an end-fire quasi-Yagi antenna on an AlN substrate. This end-fire and directional antenna design eliminates the need for the integration of an additional Si-lens into the antenna for directional power transmission. The high bias dependent nonlinearity of the integrated NBUTC-PD means that the bias modulation technique can be used to directly up-convert the intermediate-frequency signal to a millimeter-wave signal at -band without using a costly high-speed optical modulator. A reasonable detected power (-17 dBm at 106 GHz) can be achieved with the demonstrated device with a high-output photocurrent (30 mA) and a low internal-conversion loss (-2.4 dB) between the radio-frequency and local-oscillator signals at -band.
KW - High-power photodiode
KW - Optoelectronic mixer
KW - Photodiode
KW - Photonic transmitter
UR - http://www.scopus.com/inward/record.url?scp=68049092240&partnerID=8YFLogxK
U2 - 10.1109/LPT.2008.2004689
DO - 10.1109/LPT.2008.2004689
M3 - 期刊論文
AN - SCOPUS:68049092240
SN - 1041-1135
VL - 20
SP - 1799
EP - 1801
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 21
ER -