A very high charge, high polarization gradient-doped strained GaAs photocathode

T. Maruyama; A. Brachmann; J. E. Clendenin; T. Desikan; E. L. Garwin; R. E. Kirby; D. A. Luh; J. Turner; R. Prepost

doi:10.1016/S0168-9002(02)01290-1

A very high charge, high polarization gradient-doped strained GaAs photocathode

T. Maruyama, A. Brachmann, J. E. Clendenin, T. Desikan, E. L. Garwin, R. E. Kirby, D. A. Luh, J. Turner, R. Prepost

Department of Physics

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78 Scopus citations

Abstract

A high charge and polarization gradient-doped strained GaAs photocathode was discussed. A 5.0-7.5 nm p-type surface layer doped to 5 × 10¹⁹ cm^-3 was found to overcome the surface charge limit while maintaining high beam polarization. The peak current capability was also determined by overlaying short pulse laser. Results showed that a peak current as high as 9.2 A was obtained.

Original language	English
Pages (from-to)	199-211
Number of pages	13
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	492
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-9002(02)01290-1
State	Published - 11 Oct 2002

Keywords

GaAs photocathode
Polarized electron source

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10.1016/S0168-9002(02)01290-1

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Maruyama, T., Brachmann, A., Clendenin, J. E., Desikan, T., Garwin, E. L., Kirby, R. E., Luh, D. A., Turner, J., & Prepost, R. (2002). A very high charge, high polarization gradient-doped strained GaAs photocathode. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 492(1-2), 199-211. https://doi.org/10.1016/S0168-9002(02)01290-1

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abstract = "A high charge and polarization gradient-doped strained GaAs photocathode was discussed. A 5.0-7.5 nm p-type surface layer doped to 5 × 1019 cm-3 was found to overcome the surface charge limit while maintaining high beam polarization. The peak current capability was also determined by overlaying short pulse laser. Results showed that a peak current as high as 9.2 A was obtained.",

keywords = "GaAs photocathode, Polarized electron source",

author = "T. Maruyama and A. Brachmann and Clendenin, \{J. E.\} and T. Desikan and Garwin, \{E. L.\} and Kirby, \{R. E.\} and Luh, \{D. A.\} and J. Turner and R. Prepost",

note = "Funding Information: We thank G. Mulhollan for his contribution to the early part of this work, and T. Galetto for technical assistance. This work was supported by Department of Energy contract DE-AC03-76SF00515(SLAC) and DE-FG02-95ER40896(Wisconsin).",

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Maruyama, T, Brachmann, A, Clendenin, JE, Desikan, T, Garwin, EL, Kirby, RE, Luh, DA, Turner, J & Prepost, R 2002, 'A very high charge, high polarization gradient-doped strained GaAs photocathode', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 492, no. 1-2, pp. 199-211. https://doi.org/10.1016/S0168-9002(02)01290-1

A very high charge, high polarization gradient-doped strained GaAs photocathode. / Maruyama, T.; Brachmann, A.; Clendenin, J. E. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 492, No. 1-2, 11.10.2002, p. 199-211.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A very high charge, high polarization gradient-doped strained GaAs photocathode

AU - Maruyama, T.

AU - Brachmann, A.

AU - Clendenin, J. E.

AU - Desikan, T.

AU - Garwin, E. L.

AU - Kirby, R. E.

AU - Luh, D. A.

AU - Turner, J.

AU - Prepost, R.

N1 - Funding Information: We thank G. Mulhollan for his contribution to the early part of this work, and T. Galetto for technical assistance. This work was supported by Department of Energy contract DE-AC03-76SF00515(SLAC) and DE-FG02-95ER40896(Wisconsin).

PY - 2002/10/11

Y1 - 2002/10/11

N2 - A high charge and polarization gradient-doped strained GaAs photocathode was discussed. A 5.0-7.5 nm p-type surface layer doped to 5 × 1019 cm-3 was found to overcome the surface charge limit while maintaining high beam polarization. The peak current capability was also determined by overlaying short pulse laser. Results showed that a peak current as high as 9.2 A was obtained.

AB - A high charge and polarization gradient-doped strained GaAs photocathode was discussed. A 5.0-7.5 nm p-type surface layer doped to 5 × 1019 cm-3 was found to overcome the surface charge limit while maintaining high beam polarization. The peak current capability was also determined by overlaying short pulse laser. Results showed that a peak current as high as 9.2 A was obtained.

KW - GaAs photocathode

KW - Polarized electron source

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DO - 10.1016/S0168-9002(02)01290-1

M3 - 期刊論文

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SN - 0168-9002

VL - 492

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-2

ER -

A very high charge, high polarization gradient-doped strained GaAs photocathode

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