@inproceedings{a07c6d0a1b6448fd8bd51666f0b90c85,
title = "A V-band Nonlinear Effect Cancellation Enhance the Linearity of GCPW LNA using 0.13-μm CMOS",
abstract = "The paper presents a V-band Low Noise Amplifier (LNA) utilizing Grounded Coplanar Waveguide (GCPW) technology, known for its high linearity, low noise figure, and low power consumption. It examines various transistor finger width to gate width ratios to optimize transistor performance, concluding that a common source (CS) topology with a 3 μm transistor gate width offers superior performance due to enhanced current density. To improve linearity, a third-order transconductance cancellation technique is used to offset the negative gm3 value in the three-stage LNA design. The amplifier achieves a gain of 10.7 dB and a measured noise figure (NF) of 3.7 dB, while consuming 6.8 mW of power from a 1-V supply in high linearity mode. The LNA die, with pads included, measures 0.59 × 0.59",
keywords = "Body bias, CMOS low noise amplifier, linearity, low power, V-band",
author = "Chen, {Po Ning} and Lin, {Hsin Chieh} and Chiou, {Hwann Kaeo}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024 ; Conference date: 01-09-2024 Through 06-09-2024",
year = "2024",
doi = "10.1109/IRMMW-THz60956.2024.10697778",
language = "???core.languages.en_GB???",
series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",
publisher = "IEEE Computer Society",
booktitle = "2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024",
}