A V-Band CMOS Low-DC-Power Wide-Locking-Range Divide-by-6 Injection-Locked Frequency Divider Using Transformer Coupling

Hong Yeh Chang; Wei Cheng Chen; Han Non Yeh; Ian Yi En Shen

doi:10.1109/LMWC.2020.2992107

A V-Band CMOS Low-DC-Power Wide-Locking-Range Divide-by-6 Injection-Locked Frequency Divider Using Transformer Coupling

Hong Yeh Chang, Wei Cheng Chen, Han Non Yeh, Ian Yi En Shen

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A V -band low-dc-power wide-locking-range divide-by-6 injection-locked frequency divider (ILFD) using a 90-nm CMOS process is proposed in this letter. The proposed innovative topology is composed of current-reused oscillation cores with transformer coupling. Moreover, the dc bias of the injectors can be properly applied to widen the locking range (LR). With a core dc power of 5.6 mW and an input power of -5 dBm, the measured maximum locking is 5.6 GHz (9.8%) from 54.5 to 60.1 GHz. When compared to the previously reported V -band ILFDs, this work features a high division ratio, low dc power, wide LR, and good sensitivity.

Original language	English
Article number	9093885
Pages (from-to)	593-596
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2020.2992107
State	Published - Jun 2020

Keywords

CMOS
V-band
high speed
injection-locked frequency divider (ILFD)
microwave and millimeter-wave (MMW)
radio frequency integrated circuit (RFIC)/monolithic microwave integrated circuit (MMIC)

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10.1109/LMWC.2020.2992107

Research on W-Band Radar Frontend Integrated Circuits for Miniature Unmanned Aerial Vehicle Applications(3/3)
Chang, H.-Y. (PI)
1/08/19 → 31/01/21
Project: Research

Cite this

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title = "A V-Band CMOS Low-DC-Power Wide-Locking-Range Divide-by-6 Injection-Locked Frequency Divider Using Transformer Coupling",

abstract = "A V -band low-dc-power wide-locking-range divide-by-6 injection-locked frequency divider (ILFD) using a 90-nm CMOS process is proposed in this letter. The proposed innovative topology is composed of current-reused oscillation cores with transformer coupling. Moreover, the dc bias of the injectors can be properly applied to widen the locking range (LR). With a core dc power of 5.6 mW and an input power of -5 dBm, the measured maximum locking is 5.6 GHz (9.8%) from 54.5 to 60.1 GHz. When compared to the previously reported V -band ILFDs, this work features a high division ratio, low dc power, wide LR, and good sensitivity.",

keywords = "CMOS, V-band, high speed, injection-locked frequency divider (ILFD), microwave and millimeter-wave (MMW), radio frequency integrated circuit (RFIC)/monolithic microwave integrated circuit (MMIC)",

author = "Chang, {Hong Yeh} and Chen, {Wei Cheng} and Yeh, {Han Non} and Shen, {Ian Yi En}",

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AU - Chang, Hong Yeh

AU - Chen, Wei Cheng

AU - Yeh, Han Non

AU - Shen, Ian Yi En

PY - 2020/6

Y1 - 2020/6

N2 - A V -band low-dc-power wide-locking-range divide-by-6 injection-locked frequency divider (ILFD) using a 90-nm CMOS process is proposed in this letter. The proposed innovative topology is composed of current-reused oscillation cores with transformer coupling. Moreover, the dc bias of the injectors can be properly applied to widen the locking range (LR). With a core dc power of 5.6 mW and an input power of -5 dBm, the measured maximum locking is 5.6 GHz (9.8%) from 54.5 to 60.1 GHz. When compared to the previously reported V -band ILFDs, this work features a high division ratio, low dc power, wide LR, and good sensitivity.

AB - A V -band low-dc-power wide-locking-range divide-by-6 injection-locked frequency divider (ILFD) using a 90-nm CMOS process is proposed in this letter. The proposed innovative topology is composed of current-reused oscillation cores with transformer coupling. Moreover, the dc bias of the injectors can be properly applied to widen the locking range (LR). With a core dc power of 5.6 mW and an input power of -5 dBm, the measured maximum locking is 5.6 GHz (9.8%) from 54.5 to 60.1 GHz. When compared to the previously reported V -band ILFDs, this work features a high division ratio, low dc power, wide LR, and good sensitivity.

KW - CMOS

KW - V-band

KW - high speed

KW - injection-locked frequency divider (ILFD)

KW - microwave and millimeter-wave (MMW)

KW - radio frequency integrated circuit (RFIC)/monolithic microwave integrated circuit (MMIC)

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A V-Band CMOS Low-DC-Power Wide-Locking-Range Divide-by-6 Injection-Locked Frequency Divider Using Transformer Coupling

Abstract

Keywords

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Projects

Research on W-Band Radar Frontend Integrated Circuits for Miniature Unmanned Aerial Vehicle Applications(3/3)

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