A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology

Shen Ming Li; Han Nong Yeh; Hong Yeh Chang

doi:10.1109/LMWC.2017.2779754

A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology

Shen Ming Li
, Han Nong Yeh
, Hong Yeh Chang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A V-band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten.

Original language	English
Article number	8226801
Pages (from-to)	76-78
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2017.2779754
State	Published - Jan 2018

Keywords

CMOS
V-band.
current-mode logic
high speed
injection-locked frequency divider (ILFD)
microwave and millimeter-wave (MMW)

Access to Document

10.1109/LMWC.2017.2779754

Development of High Performance Frontend Integrated Circuits for Microwave and Millimeter-Wave Measurement Instruments(2/3)
Chang, H.-Y. (PI)
1/08/17 → 31/07/18
Project: Research
Research on W-Band Radar Frontend Integrated Circuits for Miniature Unmanned Aerial Vehicle Applications(1/3)
Chang, H.-Y. (PI)
1/08/17 → 31/07/18
Project: Research

Cite this

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title = "A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology",

abstract = "A V-band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten.",

keywords = "CMOS, V-band., current-mode logic, high speed, injection-locked frequency divider (ILFD), microwave and millimeter-wave (MMW)",

author = "Li, \{Shen Ming\} and Yeh, \{Han Nong\} and Chang, \{Hong Yeh\}",

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AU - Li, Shen Ming

AU - Yeh, Han Nong

AU - Chang, Hong Yeh

PY - 2018/1

Y1 - 2018/1

N2 - A V-band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten.

AB - A V-band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten.

KW - CMOS

KW - V-band.

KW - current-mode logic

KW - high speed

KW - injection-locked frequency divider (ILFD)

KW - microwave and millimeter-wave (MMW)

UR - https://www.scopus.com/pages/publications/85039775875

U2 - 10.1109/LMWC.2017.2779754

DO - 10.1109/LMWC.2017.2779754

M3 - 期刊論文

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

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ER -

A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology

Abstract

Keywords

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Projects

Development of High Performance Frontend Integrated Circuits for Microwave and Millimeter-Wave Measurement Instruments(2/3)

Research on W-Band Radar Frontend Integrated Circuits for Miniature Unmanned Aerial Vehicle Applications(1/3)

Cite this