A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology

Shen Ming Li, Han Nong Yeh, Hong Yeh Chang

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A V-band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten.

Original languageEnglish
Article number8226801
Pages (from-to)76-78
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume28
Issue number1
DOIs
StatePublished - Jan 2018

Keywords

  • CMOS
  • V-band.
  • current-mode logic
  • high speed
  • injection-locked frequency divider (ILFD)
  • microwave and millimeter-wave (MMW)

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