A two-stack, multi-color in 0.5Ga0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection

Lin Jiang; Sheng S. Li; W. S. Liu; N. T. Yeh; J. I. Chyi

doi:10.1016/j.infrared.2004.04.003

A two-stack, multi-color in _0.5Ga_0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection

Lin Jiang, Sheng S. Li, W. S. Liu, N. T. Yeh, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A two-stack multi-color quantum dot infrared photodetector (QDIP) for detection in the 8-12 μm spectral window was introduced. The top stack was made up of 8 periods of In_0.5Ga_0.5As/GaAs QDs, and the second stack consists of 8 periods of InAs/GaAs QDs, and a 500 Å GaAs spacer was used for each period in both stacks. A photoresponse peak around 7.9-9.0 μm was observed for the top stack, while two additional peaks (i.e., 7.2 and 10.6 μm) were found for the bottom stack. Thermionic emission current and thermally assisted tunneling current were found to be the major dark current components. The normal incident responsivity was observed up to 130 K for the top stack, and 110 K for the bottom stack, with S/N > 1. At V_b = -0.8 V and T = 40 K, the BLIP detectivity D* _BLIP was found to be 4.52 × 10⁹ cm Hz ^1/2/W at λ_p = 8.4 μm in the top stack. At λ_b = -0.77 V and T = 40 K, the value of D* _BLIP was found to be 2.06 × 10⁹ cm Hz ^1/2/W at λ_p = 10.6 μm for the bottom stack.

Original language	English
Pages (from-to)	249-256
Number of pages	8
Journal	Infrared Physics and Technology
Volume	46
Issue number	3
DOIs	https://doi.org/10.1016/j.infrared.2004.04.003
State	Published - Jan 2005

Keywords

GaAs
InAs
InGaAs
LWIR
Multi-color
Quantum dot infrared photodetector (QDIP)
Two-stack

Access to Document

10.1016/j.infrared.2004.04.003

Cite this

@article{a301e41f8f2a4f4dba571bc5bff342b0,

title = "A two-stack, multi-color in 0.5Ga0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection",

abstract = "A two-stack multi-color quantum dot infrared photodetector (QDIP) for detection in the 8-12 μm spectral window was introduced. The top stack was made up of 8 periods of In0.5Ga0.5As/GaAs QDs, and the second stack consists of 8 periods of InAs/GaAs QDs, and a 500 {\AA} GaAs spacer was used for each period in both stacks. A photoresponse peak around 7.9-9.0 μm was observed for the top stack, while two additional peaks (i.e., 7.2 and 10.6 μm) were found for the bottom stack. Thermionic emission current and thermally assisted tunneling current were found to be the major dark current components. The normal incident responsivity was observed up to 130 K for the top stack, and 110 K for the bottom stack, with S/N > 1. At Vb = -0.8 V and T = 40 K, the BLIP detectivity D* BLIP was found to be 4.52 × 109 cm Hz 1/2/W at λp = 8.4 μm in the top stack. At λb = -0.77 V and T = 40 K, the value of D* BLIP was found to be 2.06 × 109 cm Hz 1/2/W at λp = 10.6 μm for the bottom stack.",

keywords = "GaAs, InAs, InGaAs, LWIR, Multi-color, Quantum dot infrared photodetector (QDIP), Two-stack",

author = "Lin Jiang and Li, {Sheng S.} and Liu, {W. S.} and Yeh, {N. T.} and Chyi, {J. I.}",

note = "Funding Information: This work was sponsored by the US Army Research Office (ARO) under Contract No. DAAD 19-01-1-0673. The author (Li) would like to thank Dr. Bill Clark of ARO for his interest and support of this work. The work at National Central University was supported by the National Science Council of ROC under Contract No. NSC-91-2120-E-008-001, and Center for Nano-Science and Technology of the University System of Taiwan.",

year = "2005",

month = jan,

doi = "10.1016/j.infrared.2004.04.003",

language = "???core.languages.en_GB???",

volume = "46",

pages = "249--256",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

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TY - JOUR

T1 - A two-stack, multi-color in 0.5Ga0.5As/GaAs and InAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection

AU - Jiang, Lin

AU - Li, Sheng S.

AU - Liu, W. S.

AU - Yeh, N. T.

AU - Chyi, J. I.

N1 - Funding Information: This work was sponsored by the US Army Research Office (ARO) under Contract No. DAAD 19-01-1-0673. The author (Li) would like to thank Dr. Bill Clark of ARO for his interest and support of this work. The work at National Central University was supported by the National Science Council of ROC under Contract No. NSC-91-2120-E-008-001, and Center for Nano-Science and Technology of the University System of Taiwan.

PY - 2005/1

Y1 - 2005/1

N2 - A two-stack multi-color quantum dot infrared photodetector (QDIP) for detection in the 8-12 μm spectral window was introduced. The top stack was made up of 8 periods of In0.5Ga0.5As/GaAs QDs, and the second stack consists of 8 periods of InAs/GaAs QDs, and a 500 Å GaAs spacer was used for each period in both stacks. A photoresponse peak around 7.9-9.0 μm was observed for the top stack, while two additional peaks (i.e., 7.2 and 10.6 μm) were found for the bottom stack. Thermionic emission current and thermally assisted tunneling current were found to be the major dark current components. The normal incident responsivity was observed up to 130 K for the top stack, and 110 K for the bottom stack, with S/N > 1. At Vb = -0.8 V and T = 40 K, the BLIP detectivity D* BLIP was found to be 4.52 × 109 cm Hz 1/2/W at λp = 8.4 μm in the top stack. At λb = -0.77 V and T = 40 K, the value of D* BLIP was found to be 2.06 × 109 cm Hz 1/2/W at λp = 10.6 μm for the bottom stack.

AB - A two-stack multi-color quantum dot infrared photodetector (QDIP) for detection in the 8-12 μm spectral window was introduced. The top stack was made up of 8 periods of In0.5Ga0.5As/GaAs QDs, and the second stack consists of 8 periods of InAs/GaAs QDs, and a 500 Å GaAs spacer was used for each period in both stacks. A photoresponse peak around 7.9-9.0 μm was observed for the top stack, while two additional peaks (i.e., 7.2 and 10.6 μm) were found for the bottom stack. Thermionic emission current and thermally assisted tunneling current were found to be the major dark current components. The normal incident responsivity was observed up to 130 K for the top stack, and 110 K for the bottom stack, with S/N > 1. At Vb = -0.8 V and T = 40 K, the BLIP detectivity D* BLIP was found to be 4.52 × 109 cm Hz 1/2/W at λp = 8.4 μm in the top stack. At λb = -0.77 V and T = 40 K, the value of D* BLIP was found to be 2.06 × 109 cm Hz 1/2/W at λp = 10.6 μm for the bottom stack.

KW - GaAs

KW - InAs

KW - InGaAs

KW - LWIR

KW - Multi-color

KW - Quantum dot infrared photodetector (QDIP)

KW - Two-stack

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U2 - 10.1016/j.infrared.2004.04.003

DO - 10.1016/j.infrared.2004.04.003

M3 - 期刊論文

AN - SCOPUS:10444287635

SN - 1350-4495

VL - 46

SP - 249

EP - 256

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 3