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Abstract
Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.
Original language | English |
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Title of host publication | Proceedings - 2016 IEEE 25th Asian Test Symposium, ATS 2016 |
Publisher | IEEE Computer Society |
Pages | 281-286 |
Number of pages | 6 |
ISBN (Electronic) | 9781509038084 |
DOIs | |
State | Published - 22 Dec 2016 |
Event | 25th IEEE Asian Test Symposium, ATS 2016 - Hiroshima, Japan Duration: 21 Nov 2016 → 24 Nov 2016 |
Publication series
Name | Proceedings of the Asian Test Symposium |
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ISSN (Print) | 1081-7735 |
Conference
Conference | 25th IEEE Asian Test Symposium, ATS 2016 |
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Country/Territory | Japan |
City | Hiroshima |
Period | 21/11/16 → 24/11/16 |
Keywords
- Memristor
- non-volatile memory
- process variation
- reliability
- test
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應用於三維積體電路可測性及可靠性設計技術-總計畫暨子計畫一:三維積體電路中堆疊式記憶體與晶粒間連接線可測性與可靠性技術
Li, J.-F. (PI)
1/05/15 → 31/07/16
Project: Research