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Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.
|Title of host publication||Proceedings - 2016 IEEE 25th Asian Test Symposium, ATS 2016|
|Publisher||IEEE Computer Society|
|Number of pages||6|
|State||Published - 22 Dec 2016|
|Event||25th IEEE Asian Test Symposium, ATS 2016 - Hiroshima, Japan|
Duration: 21 Nov 2016 → 24 Nov 2016
|Name||Proceedings of the Asian Test Symposium|
|Conference||25th IEEE Asian Test Symposium, ATS 2016|
|Period||21/11/16 → 24/11/16|
- non-volatile memory
- process variation
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- 1 Finished
1/05/15 → 31/07/16