A Test Method for Finding Boundary Currents of 1T1R Memristor Memories

Tzu Ying Lin, Yong Xiao Chen, Jin Fu Li, Chih Yen Lo, Ding Ming Kwai, Yung Fa Chou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.

Original languageEnglish
Title of host publicationProceedings - 2016 IEEE 25th Asian Test Symposium, ATS 2016
PublisherIEEE Computer Society
Pages281-286
Number of pages6
ISBN (Electronic)9781509038084
DOIs
StatePublished - 22 Dec 2016
Event25th IEEE Asian Test Symposium, ATS 2016 - Hiroshima, Japan
Duration: 21 Nov 201624 Nov 2016

Publication series

NameProceedings of the Asian Test Symposium
ISSN (Print)1081-7735

Conference

Conference25th IEEE Asian Test Symposium, ATS 2016
Country/TerritoryJapan
CityHiroshima
Period21/11/1624/11/16

Keywords

  • Memristor
  • non-volatile memory
  • process variation
  • reliability
  • test

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