A "smarter-cut" approach to low temperature silicon layer transfer

Q. Y. Tong, R. Scholz, U. Gösele, T. H. Lee, L. J. Huang, Y. L. Chao, T. Y. Tan

Research output: Contribution to journalArticlepeer-review

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Abstract

Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200°C.

Original languageEnglish
Pages (from-to)49-51
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number1
DOIs
StatePublished - 1998

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