A Si/SiGe based impact ionization avalanche transit time photodiode with ultra-high gain-bandwidth Product (690GHz) for 10-Gb/s fiber communication

J. W. Shi, F. M. Kuo, F. C. Hong, Y. S. Wu, D. J.F. Fulgoni, L. J. Nash, M. J. Palmer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-bandwidth product (690GHz, 30GHz bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.

Original languageEnglish
Title of host publication2009 Conference on Optical Fiber Communication, OFC 2009
StatePublished - 2009
Event2009 Conference on Optical Fiber Communication, OFC 2009 - San Diego, CA, United States
Duration: 22 Mar 200926 Mar 2009

Publication series

NameConference on Optical Fiber Communication, Technical Digest Series

Conference

Conference2009 Conference on Optical Fiber Communication, OFC 2009
Country/TerritoryUnited States
CitySan Diego, CA
Period22/03/0926/03/09

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