The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.
|State||Published - 1994|
|Event||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
Duration: 12 Jul 1994 → 15 Jul 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|Period||12/07/94 → 15/07/94|