A simple adapted Gummel method for amorphous silicon device simulation

Yao Tsung Tsai; Kuo Don Hong; Yin Lun Yuan

doi:10.1109/EDMS.1994.863884

A simple adapted Gummel method for amorphous silicon device simulation

Yao Tsung Tsai, Kuo Don Hong, Yin Lun Yuan

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.863884
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

Access to Document

10.1109/EDMS.1994.863884

Cite this

@conference{5dcba2e1e2ff48d0841030c7d5d90a59,

title = "A simple adapted Gummel method for amorphous silicon device simulation",

abstract = "The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.",

author = "Tsai, {Yao Tsung} and Hong, {Kuo Don} and Yuan, {Yin Lun}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.863884",

language = "???core.languages.en_GB???",

}

TY - CONF

T1 - A simple adapted Gummel method for amorphous silicon device simulation

AU - Tsai, Yao Tsung

AU - Hong, Kuo Don

AU - Yuan, Yin Lun

PY - 1994

Y1 - 1994

N2 - The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.

AB - The paper present a simple adapted Gummel method (AGM) for amorphous silicon (a-Si) device simulation. The AGM is compared with Gummel method (GM) by two numerical experiments. The comparisons shows the AGM not only converges much faster, but also is more robust than GM. Simulation results show that the AGM is very helpful for a-Si device simulation.

UR - http://www.scopus.com/inward/record.url?scp=85063576706&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.863884

DO - 10.1109/EDMS.1994.863884

M3 - 會議論文

AN - SCOPUS:85063576706

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

A simple adapted Gummel method for amorphous silicon device simulation

Abstract

Conference

Access to Document

Fingerprint

Cite this