A self-formed nanonetwork meshed Pt layer on an epitaxial GaN surface

C. Y. Liu, C. C. Chang, Y. J. Chen, P. H. Chen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A self-formed nanonetwork meshed Pt layer formed on the epitaxial (0 0 0 1) GaN substrate upon thermal annealing. Electron backscatter diffraction analysis shows that, while the meshed Pt layer was forming on the GaN surface, Pt atoms rearranged themselves in a (1 1 1)-preferred orientation on (0 0 0 1) GaN. The (1 1 1) Pt/(0 0 0 1) GaN interface represents the most energy-favored stacking configuration. This unique meshed Pt layer demonstrates a relatively high transmittance in visible range, which can be used as a high-reflectivity/low- resistance p-GaN contact for high-power LEDs.

Original languageEnglish
Pages (from-to)533-536
Number of pages4
JournalScripta Materialia
Volume64
Issue number6
DOIs
StatePublished - Mar 2011

Keywords

  • Metallizations
  • Optical reflectivity
  • Self-organization and patterning
  • Wetting

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