A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

Juh Tzeng Lue, Shyu Sheau-yang, Lyu Ling-Hsiao

Research output: Contribution to journalArticlepeer-review

Abstract

A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S2 and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 1018 cm-3.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalVacuum
Volume36
Issue number5
DOIs
StatePublished - May 1986

Fingerprint

Dive into the research topics of 'A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors'. Together they form a unique fingerprint.

Cite this