A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

Juh Tzeng Lue; Shyu Sheau-yang; Lyu Ling-Hsiao

doi:10.1016/0042-207X(86)90605-6

A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

Juh Tzeng Lue, Shyu Sheau-yang, Lyu Ling-Hsiao

Department of Space Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S₂ and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 10¹⁸ cm^-3.

Original language	English
Pages (from-to)	275-278
Number of pages	4
Journal	Vacuum
Volume	36
Issue number	5
DOIs	https://doi.org/10.1016/0042-207X(86)90605-6
State	Published - May 1986

Access to Document

10.1016/0042-207X(86)90605-6

Cite this

@article{28f22e12124a49b9ab7f30d6bbafcd27,

title = "A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors",

abstract = "A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S2 and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 1018 cm-3.",

author = "Lue, {Juh Tzeng} and Shyu Sheau-yang and Lyu Ling-Hsiao",

year = "1986",

month = may,

doi = "10.1016/0042-207X(86)90605-6",

language = "???core.languages.en_GB???",

volume = "36",

pages = "275--278",

journal = "Vacuum",

issn = "0042-207X",

number = "5",

}

TY - JOUR

T1 - A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

AU - Lue, Juh Tzeng

AU - Sheau-yang, Shyu

AU - Ling-Hsiao, Lyu

PY - 1986/5

Y1 - 1986/5

N2 - A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S2 and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 1018 cm-3.

AB - A field emission cathode composed of multiple tungsten pins providing uniform discharge and a Wehnelt cylinder performing focusing and triggering are the new features of this pulsed electron beam source. We have successfully annealed ion-implanted CdTe, Culn S2 and silicon from their damage states. The activation of p-type CdTe dopants can reach as high as 3 × 1018 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0022717526&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(86)90605-6

DO - 10.1016/0042-207X(86)90605-6

M3 - 期刊論文

AN - SCOPUS:0022717526

SN - 0042-207X

VL - 36

SP - 275

EP - 278

JO - Vacuum

JF - Vacuum

IS - 5

ER -

A self-focused multichannel electron beam source for annealing of ion-implanted semiconductors

Abstract

Access to Document

Fingerprint

Cite this