A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan I. Ho, Mohamed Boutchich, Ching Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, Laurent Montes, Chao Sung Lai

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

Original languageEnglish
Pages (from-to)6519-6525
Number of pages7
JournalAdvanced Materials
Volume27
Issue number41
DOIs
StatePublished - 1 Nov 2015

Keywords

  • field-effect transistors
  • fluorographene
  • graphene
  • scattering
  • self-aligned

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