A Self-align Gate-last Resistive Gate Switching FinFET Nonvolatile Memory Feasible for Embedded Applications

W. Y. Yang, E. R. Hsieh, C. H. Cheng, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'A Self-align Gate-last Resistive Gate Switching FinFET Nonvolatile Memory Feasible for Embedded Applications'. Together they form a unique fingerprint.

Keyphrases

Engineering