A Self-align Gate-last Resistive Gate Switching FinFET Nonvolatile Memory Feasible for Embedded Applications

W. Y. Yang, E. R. Hsieh, C. H. Cheng, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, we propose a FinFET resistance gate switching nonvolatile memory (RG-FinFET) which comprises a simple RRAM structure on top of a HKMG FinFET gate. The readout is taken from the FinFET VT or ID and its operation is based on the resistance switching instead of the conventional charge storage. The SET/RESET operation of the memory is made by the edge tunneling between top gate and source. The RG-FinFET shows ultra-low switching current, FORMing-free and ultra-fast SET/RESET speed. Comparing to conventional drain-type 1T1R, proposed gate-type 1T features low power consumption, smaller size in layout and larger window. It also exhibits excellent reliabilities, e.g., a very large window with highly stable retention, no sneak path, immunity to disturbances etc. Moreover, RG-FinFET is fully compatible with the logic CMOS technology and well-suited for NOR type memories, showing great potential for the future embedded applications.

Original languageEnglish
Title of host publication2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-24
Number of pages2
ISBN (Electronic)9781728197357
DOIs
StatePublished - Jun 2020
Event2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States
Duration: 13 Jun 202014 Jun 2020

Publication series

Name2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Country/TerritoryUnited States
CityHonolulu
Period13/06/2014/06/20

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