@inproceedings{f367c921c2304b9aaa73c318209e4783,
title = "A Reliable Triple-Level Operation of Resistive-Gate Flash Featuring Forming-Free and High Immunity to Sneak Path",
abstract = "We demonstrated for the first time a triple-level operation of a resistive-gate Flash (RG-Flash) on a FinFET platform. Comprehensive reliabilities have been examined. The results show the forming-free property, low programming (PGM) current (<0.1uA), and ultra-fast PGM time (<10ns), enabling extremely high active energy efficiency, 3 fJ/switching. Furthermore, a multi-level capability featuring a 3-bit-per-cell (8 levels) operation has been demonstrated successfully. We have also achieved more than 105 cycles endurance and excellent data retention for each level in 125°C for over one month. The array-level reliability is also evaluated, showing well disturbance-immune during SET/RESET, no sneak-path issues, which keep healthy signal-to-noise margin, with window= 10x between two levels, even if the array is expanded to 1 million-cells size. This work provides a strong candidate for the next generation Flash with resistive switching and CMOS process compatibility.",
keywords = "FinFET, RG-Flash, RRAM, Resistance memory, Sneak path, Triple-level operation",
author = "Yang, {W. Y.} and Hsieh, {E. R.} and Cheng, {C. H.} and Chen, {B. Y.} and Li, {K. S.} and Chung, {Steve S.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405179",
language = "???core.languages.en_GB???",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
}