A Pseudomorphic GaInP/InP MESFET with Improved Device Performance

K. C. Lin, Y. M. Hsin, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A high bandgap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt2Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10 -2 times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 μm gate length GaInP/InP MESFET.

Original languageEnglish
Pages (from-to)2361-2362
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume40
Issue number12
DOIs
StatePublished - Dec 1993

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