A Pseudo-Junction Barrier Schottky Diode in p-GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

This work investigates a pseudo-junction barrier Schottky (pseudo-JBS) diode that is created by placing an AlGaN/GaN Schottky diode in parallel with a p-GaN junction on the same epitaxial p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) wafer. This pseudo-JBS diode employs the two-dimentional electron gas to increase the operation current, thus reducing the on-resistance with high blocking voltage. The fabricated pseudo-JBS diode with anode-to-cathode lengths (L_AC) of 10 μm shows a turn-on voltage of 1.05 V, a minimum specific on-resistance (R_ON,MIN) of 2.53 mΩ cm², and blocking voltage of 1112 V yielding an excellent Baliga's figure of merit of 488.7 MW cm⁻² on the same epitaxial p-GaN/AlGaN/GaN HEMT wafer. This study provides a promising substitute for Schottky barrier diodes without requiring extra p-GaN layer design.