@article{2cc1be444028458887d0728881553aa7,
title = "A patterned dielectric support process for high performance passive fabrication",
abstract = "This letter presents a micromachining process to effectively reduce substrate loss via a structure of patterned oxide/nitride fins on a silicon substrate with a resistivity of 1 Ω-cm. Experimental results demonstrate that the insertion loss of a coplanar waveguide (CPW) deposited on the structure can be lowered to the value of 4.33 dB/cm at 40 GHz. Meanwhile, an analytical model is developed to predict the characteristics of the CPW.",
keywords = "Coplanar waveguide (CPW), Effective dielectric constant, Equivalent impedance, Oxide/nitride fins, Radio frequency integrated circuit (RFIC), Substrate loss",
author = "Chen, {C. C.} and Chen, {Ssu Ying} and Cheng, {Y. T.}",
note = "Funding Information: Manuscript received July 24, 2007; revised September 14, 2007. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grant NSC 95-2220-E-009-036 and in part by STC, ITRI. The authors are with Microsystems Integration Laboratory, Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C. (e-mail: ytcheng@mail.nctu.edu.tw). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2007.915030 Fig. 1. Comparison of experimental results between the measured losses of CPWs fabricated with and without oxide/nitride fin support on a conventional silicon substrate.",
year = "2008",
month = feb,
doi = "10.1109/LMWC.2007.915030",
language = "???core.languages.en_GB???",
volume = "18",
pages = "82--84",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
number = "2",
}