A novel self-aligned raised source/drain polysilicon thin-film transistor with a high-current structure

Feng Tso Chien, Chii Wen Chen, Chien Nan Liao, Tien Chun Lee, Chi Ling Wang, Ching Hwa Cheng, Hsien Chin Chiu, Yao Tsung Tsai

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this letter, a high-current self-aligned raised source/drain polycrystalline silicon thin-film transistor (HCSARSD-TFT) is proposed and demonstrated for the first time. This new self-aligned device features two channels, i.e., a nitride spacer offset-gated structure and a raised source/drain (RSD) region, that reveal better device performance. Our experimental results show that the on-current of the HCSARSD-TFT is about two times higher than that of the conventional structure, and the leakage current is considerably reduced simultaneously. In addition, since the gate and RSD areas of the proposed device are self-aligned, no extra mask is needed when comparing it with conventional coplanar RSD TFTs.

Original languageEnglish
Article number5898384
Pages (from-to)1080-1082
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
StatePublished - Aug 2011

Keywords

  • Polycrystalline silicon thin-film transistor (poly-Si TFT)
  • raised source/drain (RSD)
  • self-aligned

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