A novel Q-band asymmetric T/R switch in GaAs pHEMT using second-order band-stop filter for wideband RX-mode isolation

Jia Shiang Fu

doi:10.1049/ell2.12962

A novel Q-band asymmetric T/R switch in GaAs pHEMT using second-order band-stop filter for wideband RX-mode isolation

Jia Shiang Fu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

To improve the RX-mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second-order band-stop filter in its TX path, which extends the bandwidth of isolation in the RX mode. Based on the proposed topology, a Q-band asymmetric T/R switch is designed and implemented in a 0.15-µm GaAs pHEMT technology. Measured isolation in the RX mode is greater than 18.4 dB from 31.7 to 46.3 GHz, corresponding to a 1.46:1 bandwidth.

Original language	English
Article number	e12962
Journal	Electronics Letters
Volume	59
Issue number	19
DOIs	https://doi.org/10.1049/ell2.12962
State	Published - Oct 2023

Keywords

microwave integrated circuits
microwave switches
MMIC

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10.1049/ell2.12962

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title = "A novel Q-band asymmetric T/R switch in GaAs pHEMT using second-order band-stop filter for wideband RX-mode isolation",

abstract = "To improve the RX-mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second-order band-stop filter in its TX path, which extends the bandwidth of isolation in the RX mode. Based on the proposed topology, a Q-band asymmetric T/R switch is designed and implemented in a 0.15-µm GaAs pHEMT technology. Measured isolation in the RX mode is greater than 18.4 dB from 31.7 to 46.3 GHz, corresponding to a 1.46:1 bandwidth.",

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AU - Fu, Jia Shiang

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N2 - To improve the RX-mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second-order band-stop filter in its TX path, which extends the bandwidth of isolation in the RX mode. Based on the proposed topology, a Q-band asymmetric T/R switch is designed and implemented in a 0.15-µm GaAs pHEMT technology. Measured isolation in the RX mode is greater than 18.4 dB from 31.7 to 46.3 GHz, corresponding to a 1.46:1 bandwidth.

AB - To improve the RX-mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second-order band-stop filter in its TX path, which extends the bandwidth of isolation in the RX mode. Based on the proposed topology, a Q-band asymmetric T/R switch is designed and implemented in a 0.15-µm GaAs pHEMT technology. Measured isolation in the RX mode is greater than 18.4 dB from 31.7 to 46.3 GHz, corresponding to a 1.46:1 bandwidth.

KW - microwave integrated circuits

KW - microwave switches

KW - MMIC

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M3 - 期刊論文

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JO - Electronics Letters

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ER -

A novel Q-band asymmetric T/R switch in GaAs pHEMT using second-order band-stop filter for wideband RX-mode isolation

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Keywords

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