A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin; E. R. Hsieh; T. C. Kao; M. Y. Lee; J. K. Chang; J. C. Guo; S. S. Chung; T. P. Chen; S. A. Huang; T. J. Chen; O. Cheng

doi:10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin, E. R. Hsieh, T. C. Kao, M. Y. Lee, J. K. Chang, J. C. Guo, S. S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9770980
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

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10.1109/VLSI-TSA54299.2022.9770980

Developments and Applications of AI chip by Neuromorphic Computing: Construction of General Neuron-Network Technology Platform and Hetero-Integration of AI Chip in Recognition of Images(1/3)
Hsieh, E.
1/02/20 → 31/01/21
Project: Research

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Lin, L. C., Hsieh, E. R., Kao, T. C., Lee, M. Y., Chang, J. K., Guo, J. C., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J., & Cheng, O. (2022). A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9770980

Lin, L. C. ; Hsieh, E. R. ; Kao, T. C. et al. / A Novel Physical Unclonable Function : NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{05a8e78f32814ddda049d97cc95c0465,

title = "A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform",

abstract = "For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C. ",

author = "Lin, {L. C.} and Hsieh, {E. R.} and Kao, {T. C.} and Lee, {M. Y.} and Chang, {J. K.} and Guo, {J. C.} and Chung, {S. S.} and Chen, {T. P.} and Huang, {S. A.} and Chen, {T. J.} and O. Cheng",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

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doi = "10.1109/VLSI-TSA54299.2022.9770980",

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series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

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Lin, LC, Hsieh, ER, Kao, TC, Lee, MY, Chang, JK, Guo, JC, Chung, SS, Chen, TP, Huang, SA, Chen, TJ & Cheng, O 2022, A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. / Lin, L. C.; Hsieh, E. R.; Kao, T. C. et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Novel Physical Unclonable Function

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

AU - Lin, L. C.

AU - Hsieh, E. R.

AU - Kao, T. C.

AU - Lee, M. Y.

AU - Chang, J. K.

AU - Guo, J. C.

AU - Chung, S. S.

AU - Chen, T. P.

AU - Huang, S. A.

AU - Chen, T. J.

AU - Cheng, O.

PY - 2022

Y1 - 2022

N2 - For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

AB - For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

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U2 - 10.1109/VLSI-TSA54299.2022.9770980

DO - 10.1109/VLSI-TSA54299.2022.9770980

M3 - 會議論文篇章

AN - SCOPUS:85130506305

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 18 April 2022 through 21 April 2022

ER -

Lin LC, Hsieh ER, Kao TC, Lee MY, Chang JK, Guo JC et al. A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

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Developments and Applications of AI chip by Neuromorphic Computing: Construction of General Neuron-Network Technology Platform and Hetero-Integration of AI Chip in Recognition of Images(1/3)

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