A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin, E. R. Hsieh, T. C. Kao, M. Y. Lee, J. K. Chang, J. C. Guo, S. S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

Original languageEnglish
Title of host publication2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665409230
DOIs
StatePublished - 2022
Event2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
Duration: 18 Apr 202221 Apr 2022

Publication series

Name2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/TerritoryTaiwan
CityHsinchu
Period18/04/2221/04/22

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