A novel high channel density trench Power MOSFETs design by asymmetric wing-cell structure

Feng Tso Chien, Chien Nan Liao, Yao Tsung Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A new cell structure Power MOSFET, which exhibits a lower on-state resistance and higher channel density than the conventional layout geometry, is proposed in this research. Vertical trench Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET. In addition, the asymmetric wing cell structure is fabricated and compared with the conventional structures. The on resistance of the proposed devices can be further reduced. Both simulations and experiments show this structure have a lower on resistance than the original design. We also found that the avalanche characteristics of the proposed device are not sacrificed owing to higher channel density. One can also use this "wing-cell" concept to avoid the "closed cell" structure patents.

Original languageEnglish
Title of host publication2007 European Conference on Power Electronics and Applications, EPE
DOIs
StatePublished - 2007
Event2007 European Conference on Power Electronics and Applications, EPE - Aalborg, Denmark
Duration: 2 Sep 20075 Sep 2007

Publication series

Name2007 European Conference on Power Electronics and Applications, EPE

Conference

Conference2007 European Conference on Power Electronics and Applications, EPE
Country/TerritoryDenmark
CityAalborg
Period2/09/075/09/07

Keywords

  • Channel density
  • On resistance (R)
  • Power MOSFETs
  • Wing-cell

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