A novel GaAs MESFET with surface oxygen implantation

Yue Ming Hsin, Kuang Po Hsueh, Chia Jen Hsu

Research output: Contribution to journalArticlepeer-review


Oxygen ion implantation has been employed, for the first time, to form the high-resistance layer in the surface of GaAs MESFETs. Comparable DC and RF performance were achieved for MESFETs with and without oxygen ion implantation; however, MESFETs with the extra surface oxygen ion implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150 °C in air. This enhancement is a result of the lower surface trapping effects resulting form a high-resistance layer by oxygen ion implantation. This approach relaxes the surface passivation problem in a standard GaAs MESFET.

Original languageEnglish
Pages (from-to)1151-1154
Number of pages4
JournalSolid-State Electronics
Issue number8
StatePublished - Aug 2002


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