A novel GaAs MESFET with surface oxygen implantation

Yue Ming Hsin; Kuang Po Hsueh; Chia Jen Hsu

doi:10.1016/S0038-1101(02)00058-8

A novel GaAs MESFET with surface oxygen implantation

Yue Ming Hsin, Kuang Po Hsueh, Chia Jen Hsu

Research output: Contribution to journal › Article › peer-review

Abstract

Oxygen ion implantation has been employed, for the first time, to form the high-resistance layer in the surface of GaAs MESFETs. Comparable DC and RF performance were achieved for MESFETs with and without oxygen ion implantation; however, MESFETs with the extra surface oxygen ion implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150 °C in air. This enhancement is a result of the lower surface trapping effects resulting form a high-resistance layer by oxygen ion implantation. This approach relaxes the surface passivation problem in a standard GaAs MESFET.

Original language	English
Pages (from-to)	1151-1154
Number of pages	4
Journal	Solid-State Electronics
Volume	46
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(02)00058-8
State	Published - Aug 2002

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title = "A novel GaAs MESFET with surface oxygen implantation",

abstract = "Oxygen ion implantation has been employed, for the first time, to form the high-resistance layer in the surface of GaAs MESFETs. Comparable DC and RF performance were achieved for MESFETs with and without oxygen ion implantation; however, MESFETs with the extra surface oxygen ion implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150 °C in air. This enhancement is a result of the lower surface trapping effects resulting form a high-resistance layer by oxygen ion implantation. This approach relaxes the surface passivation problem in a standard GaAs MESFET.",

author = "Hsin, {Yue Ming} and Hsueh, {Kuang Po} and Hsu, {Chia Jen}",

note = "Funding Information: This work was supported by the National Science Council (NSC 89-2215-E-008-036) and the Ministry of Education (89-E-FA06-1-4) of ROC.",

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T1 - A novel GaAs MESFET with surface oxygen implantation

AU - Hsin, Yue Ming

AU - Hsueh, Kuang Po

AU - Hsu, Chia Jen

N1 - Funding Information: This work was supported by the National Science Council (NSC 89-2215-E-008-036) and the Ministry of Education (89-E-FA06-1-4) of ROC.

PY - 2002/8

Y1 - 2002/8

N2 - Oxygen ion implantation has been employed, for the first time, to form the high-resistance layer in the surface of GaAs MESFETs. Comparable DC and RF performance were achieved for MESFETs with and without oxygen ion implantation; however, MESFETs with the extra surface oxygen ion implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150 °C in air. This enhancement is a result of the lower surface trapping effects resulting form a high-resistance layer by oxygen ion implantation. This approach relaxes the surface passivation problem in a standard GaAs MESFET.

AB - Oxygen ion implantation has been employed, for the first time, to form the high-resistance layer in the surface of GaAs MESFETs. Comparable DC and RF performance were achieved for MESFETs with and without oxygen ion implantation; however, MESFETs with the extra surface oxygen ion implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150 °C in air. This enhancement is a result of the lower surface trapping effects resulting form a high-resistance layer by oxygen ion implantation. This approach relaxes the surface passivation problem in a standard GaAs MESFET.

UR - http://www.scopus.com/inward/record.url?scp=0036680232&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00058-8

DO - 10.1016/S0038-1101(02)00058-8

M3 - 期刊論文

AN - SCOPUS:0036680232

SN - 0038-1101

VL - 46

SP - 1151

EP - 1154

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

ER -

A novel GaAs MESFET with surface oxygen implantation

Abstract

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