A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors

Yen Wen Kang; Geng Yen Lee; Jen Inn Chyi; Chen Pin Hsu; You Ren Hsu; Chih Cheng Huang; Fan Ren; Yu Lin Wang

doi:10.1149/05302.0055ecst

A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors

Yen Wen Kang, Geng Yen Lee, Jen Inn Chyi, Chen Pin Hsu, You Ren Hsu, Chih Cheng Huang, Fan Ren, Yu Lin Wang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

As acquired immunodeficiency syndrome (AIDS) caused by HIV-1 (human immunodeficiency virus type 1) has been in the top 10 leading causes of death for recent years, there have been many promising treatment discovered. One of the treatments is by taking non-nucleoside reverse transcriptase inhibitors (NNRTI) to suppress the activity of the HIV-1. The binding affinity of NNRTI to the reverse transcriptase (RT) of HIV-1 is an important factor determining the efficiency of the drug performance. The HIV-1 RT immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to find the dissociation constant of NNRTIs. Comparing to conventional drug analyzing, HEMTs assisting experiments are much faster in processing time and lower cost.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 14
Pages	55-59
Number of pages	5
Edition	2
DOIs	https://doi.org/10.1149/05302.0055ecst
State	Published - 2013
Event	Wide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada Duration: 12 May 2013 → 16 May 2013

Publication series

Name	ECS Transactions
Number	2
Volume	53
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Wide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
Country/Territory	Canada
City	Toronto, ON
Period	12/05/13 → 16/05/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/05302.0055ecst

Cite this

Kang, Y. W., Lee, G. Y., Chyi, J. I., Hsu, C. P., Hsu, Y. R., Huang, C. C., Ren, F., & Wang, Y. L. (2013). A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors. In Wide-Bandgap Semiconductor Materials and Devices 14 (2 ed., pp. 55-59). (ECS Transactions; Vol. 53, No. 2). https://doi.org/10.1149/05302.0055ecst

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title = "A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors",

abstract = "As acquired immunodeficiency syndrome (AIDS) caused by HIV-1 (human immunodeficiency virus type 1) has been in the top 10 leading causes of death for recent years, there have been many promising treatment discovered. One of the treatments is by taking non-nucleoside reverse transcriptase inhibitors (NNRTI) to suppress the activity of the HIV-1. The binding affinity of NNRTI to the reverse transcriptase (RT) of HIV-1 is an important factor determining the efficiency of the drug performance. The HIV-1 RT immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to find the dissociation constant of NNRTIs. Comparing to conventional drug analyzing, HEMTs assisting experiments are much faster in processing time and lower cost.",

author = "Kang, {Yen Wen} and Lee, {Geng Yen} and Chyi, {Jen Inn} and Hsu, {Chen Pin} and Hsu, {You Ren} and Huang, {Chih Cheng} and Fan Ren and Wang, {Yu Lin}",

year = "2013",

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series = "ECS Transactions",

number = "2",

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Kang, YW, Lee, GY, Chyi, JI, Hsu, CP, Hsu, YR, Huang, CC, Ren, F & Wang, YL 2013, A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors. in Wide-Bandgap Semiconductor Materials and Devices 14. 2 edn, ECS Transactions, no. 2, vol. 53, pp. 55-59, Wide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting, Toronto, ON, Canada, 12/05/13. https://doi.org/10.1149/05302.0055ecst

A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors. / Kang, Yen Wen; Lee, Geng Yen; Chyi, Jen Inn et al.
Wide-Bandgap Semiconductor Materials and Devices 14. 2. ed. 2013. p. 55-59 (ECS Transactions; Vol. 53, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - As acquired immunodeficiency syndrome (AIDS) caused by HIV-1 (human immunodeficiency virus type 1) has been in the top 10 leading causes of death for recent years, there have been many promising treatment discovered. One of the treatments is by taking non-nucleoside reverse transcriptase inhibitors (NNRTI) to suppress the activity of the HIV-1. The binding affinity of NNRTI to the reverse transcriptase (RT) of HIV-1 is an important factor determining the efficiency of the drug performance. The HIV-1 RT immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to find the dissociation constant of NNRTIs. Comparing to conventional drug analyzing, HEMTs assisting experiments are much faster in processing time and lower cost.

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A novel detection of non-nucleoside reverse transcriptase inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN high! electron mobility transistors

Abstract

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UN SDGs

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