A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 1012 Endurance

E. R. Hsieh, H. Y. Chang, Steve S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, Osbert Cheng, S. Simon Wong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, we will explore pure logic FinFET devices to realize the functionality of linear weight tuning capability as electric synapses. The unit cell of this new FinFET synapse is composed of two identical FinFETs in series; one serves as control and the other one as storage. This new FinFET synapse exhibits ideal linearity with nearly infinity training cycles (> 1012), much lower programming voltage, 0.85V, and faster speed, 2.5ns. It can also analogically increase or decrease the transistor's Vth to vary the drain conductance. As far as the analog performance is concerned, it performs excellent linearity and a wide tuning-window (20x) of weight-tuning capability. lkb synaptic array has also been designed. The spice-simulated results have shown that new FinFET synaptic array can expand the array-size to 64×64, exhibiting 300x of SNR, w.r.t. that of RRAM array. Finally, the training of the neural network based on the proposed FinFET synapse can achieve 97.43% accuracy as high as the GPU one does.

Original languageEnglish
Title of host publication2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT138-T139
ISBN (Electronic)9784863487178
DOIs
StatePublished - Jun 2019
Event39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
Duration: 9 Jun 201914 Jun 2019

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2019-June
ISSN (Print)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
Country/TerritoryJapan
CityKyoto
Period9/06/1914/06/19

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