A Novel Approach to Localize the Channel Temperature Induced by the Self-heating Effect in 14nm High-k Metal-gate FinFET

E. R. Hsieh, M. J. Jiang, H. W. Chen, J. L. Lin, Steve S. Chung, T. P. Chen, Y. H. Yeah, T. J. Chen, Osbert Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

For the first time, RTN measurement is utilized to measure the temperature (T) distribution along the channel, induced by Self-heating effect(SHE). The results have shown that the channel temperature of 14nm pFinFET is 170K higher than that of nFinFET as a result of the difficulty of heat dissipation in eSiGe S/D of pFinFET. This has been justified by a Spice built-in model to extract the necessary parameters. In nFinFET, although S/D series resistance (Rsd) dominates at room T, the channel resistance (Rc) is larger than Rsd at a higher T because of degradation of saturation velocity caused by SHE. On the other hand, in pFinFET, Rc dominates at low and high T, and Rsd becomes significant at high T because of embedded high thermal-resistance material, SiGe, in S/D. This has been justified by the mobility reduction due to the increment of phonon scattering induced by SHE. Finally, the impact of SHE on the shrinking of SRAM signal-to-noise ratio has been used as a benchmark test. New findings provide valuable information on the understanding of SHE-resistant design of future generation FinFET devices.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages148-150
Number of pages3
ISBN (Print)9781538637111
DOIs
StatePublished - 26 Jul 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/TerritoryJapan
CityKobe
Period13/03/1816/03/18

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