A novel and direct experimental observation of the discrete dopant effect in ultra-scaled CMOS devices

E. R. Hsieh, Steve S. Chung, C. H. Tsai, R. M. Huang, C. T. Tsai, C. W. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

For the first time, the channel discrete dopant profiling (DDP) of small devices are demonstrated experimentally based on a quasi-2D Vth model. The discrete -dopant distribution along the channel direction can be determined. Boron cluster in nMOSFETs was observed, resulting in a larger V th variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced strain-CMOS devices. For the SiC S/D nMOSFET, the carbon out-diffusion has been identified; for SiGe S/D pMOSFET, Ge out-diffusion has also been observed. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for studying the Vth variability of future generation CMOS devices.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages194-195
Number of pages2
StatePublished - 2011
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: 14 Jun 201116 Jun 2011

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2011 Symposium on VLSI Technology, VLSIT 2011
Country/TerritoryJapan
CityKyoto
Period14/06/1116/06/11

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