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A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors

  • E. Ray Hsieh
  • , Yu Lian Hsueh
  • , Rui Qi Lin
  • , Yi Xiang Huang
  • , Pei Jun Hou
  • , Kai Hsiang Chang
  • , Ting Ho Shen
  • , Yu Hsien Li
  • , Ruei Yang Lyu

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

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Material Science