A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors
- E. Ray Hsieh
- , Yu Lian Hsueh
- , Rui Qi Lin
- , Yi Xiang Huang
- , Pei Jun Hou
- , Kai Hsiang Chang
- , Ting Ho Shen
- , Yu Hsien Li
- , Ruei Yang Lyu
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations