A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors

E. Ray Hsieh, Yu Lian Hsueh, Rui Qi Lin, Yi Xiang Huang, Pei Jun Hou, Kai Hsiang Chang, Ting Ho Shen, Yu Hsien Li, Ruei Yang Lyu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We demonstrate a nonvolatile ternary-content-addressable-memory (nv-TCAM) composed of 2 resistive-gate field-effect transistors (RG-FETs) in series, tied at source terminals. In this nv-TCAM, an RG-FET is as a controller; the other is a data reservoir. The former offers 'Care' or 'Don't-care' operation; the latter is used to decide if the searched data are matched. To realize these functionalities, the 2-bit per-cell storage is designed in each RG-FET. Results show that searching-power for 'matching-data' is about 100 nW and smaller than $2~\mu \text{W}$ for the case of 'data-mismatched'. The searching procedure can be executed in 6.8 ns by pulses. Endurance cycles achieve $10^{{6}}$ times for each storage level with $5.47\times 10 ^{{5}}$ of the memory window; the stored information has been retained at temperatures >109.7 °C, predicted by the accelerating test of time-to-failure.

Original languageEnglish
Pages (from-to)1292-1295
Number of pages4
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2023


  • Nonvolatile ternary-content-addressable-memory (nv-TCAM)
  • in-memory-searching
  • resistive-gate field-effect-transistor (RG-FET)


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