A new type of inverter with juctionless (J-Less) transistors

E. R. Hsieh, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A new type of inverter built on a specific channel without source/drain junction is proposed. This inverter can be formed by a connected n- and p-doped channel as the substrate and with complementary p- and n-doped gates respectively. The transistor operation is in accumulation mode, different from the conventional CMOS devices with inversion mode of operation. Extensive simulations have been made to demonstrate this transistor with high current density and good short channel control on 10nm technology and beyond. Good inverter characteristics are also shown. This new inverter device will be ready for the 20nm node and beyond.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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