A new polishing pad of EVA-adhesive-dressed-with-SiC-grits polishing face and its applications in silicon wafer polishing

Sung Lin Tsai, Fuang Yuan Huang, Biing Hwa Yan, Yao Ching Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a new polishing pad with polishing silicon surface composed of a layer of Ethylene-vinyl acetate (EVA) adhesive pad coated with SiC grits. A set of polishing parameters: coating SiC grit size, concentration of SiC grit in slurry, polishing load, polishing wheel turning speed, and absorption time of polishing pad were identified with the Taguchi Methods for optimum polishing effect in terms of roughness of polished silicon surface. A surface roughness of 0.026 μm Ra can be obtained with the following values: grit size at 1.2 μm (both coated on pad and mixed in slurry), concentration of SiC grit in slurry at 25%, polishing load at 50 gram, turning speed at 10,000 rpm, absorption time of polishing pad at 15 minutes

Original languageEnglish
Title of host publicationAdvances in Abrasive Technology XIII
Pages539-544
Number of pages6
DOIs
StatePublished - 2010
Event13th International Symposium on Advances in Abrasive Technology, ISAAT2010 - Taipei, Taiwan
Duration: 19 Sep 201022 Sep 2010

Publication series

NameAdvanced Materials Research
Volume126-128
ISSN (Print)1022-6680

Conference

Conference13th International Symposium on Advances in Abrasive Technology, ISAAT2010
Country/TerritoryTaiwan
CityTaipei
Period19/09/1022/09/10

Keywords

  • Ethylene-vinyl acetate (EVA)
  • Polishing pad
  • Surface roughness
  • Taguchi method

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