@inproceedings{844d564f0db84eb3afc259738d6b46ba,
title = "A new observation of strain-induced slow traps in advanced CMOS technology with process-induced strain using random telegraph noise measurement",
abstract = "In this paper, the hot-carrier induced oxide trap and its correlation with enhanced degradation in strained CMOS devices have been reported for the first time. First, the ID-RTN (Drain Current Random Telegraph Noise) has been employed to study the HC stress induced slow oxide traps in strained nMOSFETs and pMOSFETs. Secondly, different behavior of the slow traps in nMOSFET and pMOSFET has been observed. Results show that the vertical compressive strain generates extra oxide defects and induces more scattering after the HC stress in CESL nMOSFET. This vertical strain in CESL also contributes to a non-negligible amount of extra device degradation. While, SiGe S/D pMOSFET shows different behavior in that the compressive strain in this structure shows no impact on its reliability.",
keywords = "Random telegraph noise, Slow trap, Strained-Si devices",
author = "Lin, {M. H.} and Hsieh, {E. R.} and Chung, {Steve S.} and Tsai, {C. H.} and Liu, {P. W.} and Lin, {Y. H.} and Tsai, {C. T.} and Ma, {G. H.}",
year = "2009",
language = "???core.languages.en_GB???",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "52--53",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}