A new monolithic ka-band filter-based voltage-controlled oscillator using 0.15 μm GaAs pHEMT technology

Chih Lin Chang, Chao Hsiung Tseng, Hong Yeh Chang

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12 Scopus citations

Abstract

This letter presents a fully monolithic Ka-band filter-based voltage-controlled oscillator (VCO) with the 0.15 μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) as the active device. A three-pole combline bandpass filter is treated as a frequency stabilization element of the feedback oscillator to achieve a low phase-noise performance. The developed VCO has a frequency tuning range of 37.608-38.06 GHz, and in this frequency rage the calibrated output power is from 6.324 dBm to 10.46 dBm. The phase noise measured at 37.608 GHz is-112.31 dBc/Hz at 1 MHz offset frequency, and its corresponding figure-of-merit (FOM) is-182.7 dBc/Hz.

Original languageEnglish
Article number6678655
Pages (from-to)111-113
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume24
Issue number2
DOIs
StatePublished - Feb 2014

Keywords

  • Combline filter
  • GaAs
  • filter-based microwave oscillator
  • monolithic microwave integrated circuit (MMIC)
  • pHEMT
  • voltage-controlled oscillator (VCO)

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