A new 850-nm lateral Si avalanche photodiode in standard CMOS technology

Zi Ying Li, Fang Ping Chou, Ching Wen Wang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new lateral Si avalanche photodiode is designed and implemented in standard 0.18-μm CMOS technology. The measured responsivity and 3-dB bandwidth at 850-nm wavelength are 1.24 A/W and 3.9 GHz, respectively.

Original languageEnglish
Title of host publication16th Opto-Electronics and Communications Conference, OECC 2011
Pages479-480
Number of pages2
StatePublished - 2011
Event16th Opto-Electronics and Communications Conference, OECC 2011 - Kaohsiung, Taiwan
Duration: 4 Jul 20118 Jul 2011

Publication series

Name16th Opto-Electronics and Communications Conference, OECC 2011

Conference

Conference16th Opto-Electronics and Communications Conference, OECC 2011
Country/TerritoryTaiwan
CityKaohsiung
Period4/07/118/07/11

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