A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier

Chih Chun Shen; Hong Yeh Chang; Yu Chi Wang

doi:10.1109/LMWC.2012.2210034

A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier

Chih Chun Shen, Hong Yeh Chang, Yu Chi Wang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μ m 0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm ², and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz.

Original language	English
Article number	6261566
Pages (from-to)	474-476
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	22
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2012.2210034
State	Published - 2012

Keywords

GaAs
HBT
HEMT
microwave
power amplifier (PA)

Access to Document

10.1109/LMWC.2012.2210034

Cite this

@article{431aad54d9164963912cc1b91f5da9d7,

title = "A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier",

abstract = "This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μ m 0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm 2, and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz.",

keywords = "GaAs, HBT, HEMT, microwave, power amplifier (PA)",

author = "Shen, {Chih Chun} and Chang, {Hong Yeh} and Wang, {Yu Chi}",

note = "Funding Information: Manuscript received May 24, 2012; accepted July 14, 2012. Date of publication August 06, 2012; date of current version August 30, 2012. This work was supported in part by the National Science Council of Taiwan, under Grants NSC 99-2221-E-008-097-MY3, NSC 100-2221-E-008-118, and NSC 101-2221-E-008-072-MY3, by WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC) of Taiwan.",

year = "2012",

doi = "10.1109/LMWC.2012.2210034",

language = "???core.languages.en_GB???",

volume = "22",

pages = "474--476",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

number = "9",

}

TY - JOUR

T1 - A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier

AU - Shen, Chih Chun

AU - Chang, Hong Yeh

AU - Wang, Yu Chi

N1 - Funding Information: Manuscript received May 24, 2012; accepted July 14, 2012. Date of publication August 06, 2012; date of current version August 30, 2012. This work was supported in part by the National Science Council of Taiwan, under Grants NSC 99-2221-E-008-097-MY3, NSC 100-2221-E-008-118, and NSC 101-2221-E-008-072-MY3, by WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC) of Taiwan.

PY - 2012

Y1 - 2012

N2 - This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μ m 0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm 2, and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz.

AB - This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μ m 0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm 2, and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz.

KW - GaAs

KW - HBT

KW - HEMT

KW - microwave

KW - power amplifier (PA)

UR - http://www.scopus.com/inward/record.url?scp=84866093580&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2012.2210034

DO - 10.1109/LMWC.2012.2210034

M3 - 期刊論文

AN - SCOPUS:84866093580

SN - 1531-1309

VL - 22

SP - 474

EP - 476

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 9

M1 - 6261566

ER -

A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier

Abstract

Keywords

Access to Document

Fingerprint

Cite this