A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier

Chih Chun Shen, Hong Yeh Chang, Yu Chi Wang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μ m 0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm 2, and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz.

Original languageEnglish
Article number6261566
Pages (from-to)474-476
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume22
Issue number9
DOIs
StatePublished - 2012

Keywords

  • GaAs
  • HBT
  • HEMT
  • microwave
  • power amplifier (PA)

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