A miniature 35-110 GHz modified reflection-type BPSK modulator using 65-nm CMOS technology

Hong Yeh Chang, Huei Wang, Wesley Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

A miniature 35-110 GHz modified reflection-type BPSK modulator using a 65-nm CMOS process is presented in this paper. The core area of the modulator is only 150 × 370 μm2 due to a compact broadside coupler and a 180° hybrid used in the BPSK modulator. The BPSK modulator demonstrates a modulation bandwidth of wider than 1 GHz, an error vector magnitude (EVM) of within 10%, a dc offset of better than 15 dB, and an adjacent channel power ratio (ACPR) of better than -35 dBc The modulator is also evaluated by a bi-phase 4-level amplitude modulation scheme, and demonstrates good modulation quality with low dc offset. Therefore, it is suitable to apply to an IQ modulator design, and then the high-level modulation schemes can be performed, especially for millimeter-wave (MMW) applications. To the best authors' knowledge, this work is the highest operation frequency among all the BPSK modulator using CMOS processes.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages2165-2168
Number of pages4
DOIs
StatePublished - 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/TerritoryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Keywords

  • BPSK
  • Broadband
  • CMOS
  • MMW
  • Modulator

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