A low-power wideband dual-feedback LNA exploiting the gate-inductive bandwidth/gain-enhancement technique

Hung Ting Chou, Shin Wei Chen, Hwann Kaeo Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

A novel wideband dual-feedback low noise amplifier (LNA) implemented in standard 0.18 μm CMOS process is proposed in this paper. The proposed dual feedback topology can improve the total noise contribution for LNA design. By exploiting the gate-inductive bandwidth gain-enhancement (GIBE) technique, the LNA can extend the more than 30 % bandwidth and enhance gain an overall bandwidth of DC to 5 GHz. Besides, the fabricated LNA with the current-mirror circuit consumes a power of 10.4 mW. The proposed LNA achieves an average gain of 13.9 dB and a minimum noise figure (NF) of 2.76 dB from DC to 5 GHz. The LNA achieves a good figure-of-merit (FoM) of 3.8. The chip area is 0.45 mm 2 with all pads and dummy blocks.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • CMOS LNA
  • Feedback
  • Gate-inductive bandwidth gain-enhancement

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