A low-power, compact size millimeter-wave two-stage current-reused low noise amplifier in 90-nm CMOS technology

Hung Ting Chou, Zhi Lin Ke, Hwann Kaeo Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

This paper presents a millimeter-wave (MMW) two-stage low noise amplifier (LNA) that adopts a current-reused topology to reduce the power consumption. The designed current-reused LNA comprises two stacked common source (CS) amplifiers with the same dc current for each stage to enhance the power gain. The proposed LNA is fabricated in tsmcTM 90-nm RF CMOS technology that achieves a peak S21 gain of 12 dB, a noise figure (NF) of 6.9 dB, an input third-intercept point (IIP3) of -4.1 dBm at 51 GHz under DC power of 7.7 mW from a 1.4 V supply voltage. The proposed LNA with transmission line (TL) inductors yields a compact chip size of only 0.37 mm2 and thus the calculated figure-of-merit (FoM) is up to 5.24 at 51 GHz.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages750-752
Number of pages3
DOIs
StatePublished - 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
Country/TerritoryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • current-reused topology
  • low power LNA
  • millimeter-wave (MMW)

Fingerprint

Dive into the research topics of 'A low-power, compact size millimeter-wave two-stage current-reused low noise amplifier in 90-nm CMOS technology'. Together they form a unique fingerprint.

Cite this