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Abstract
This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.
Original language | English |
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Title of host publication | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781665433914 |
DOIs | |
State | Published - 25 Aug 2021 |
Event | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan Duration: 25 Aug 2021 → 27 Aug 2021 |
Publication series
Name | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 |
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Conference
Conference | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 |
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Country/Territory | Taiwan |
City | Hualien |
Period | 25/08/21 → 27/08/21 |
Keywords
- GaN on SiC
- VCO
- X-band
- class-E
- power oscillator
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