A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Chih Cheng Chuang; Hwann Kaeo Chiou

doi:10.1109/RFIT52905.2021.9565205

A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Chih Cheng Chuang, Hwann Kaeo Chiou

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

Original language	English
Title of host publication	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565205
State	Published - 25 Aug 2021
Event	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan Duration: 25 Aug 2021 → 27 Aug 2021

Publication series

Name	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/Territory	Taiwan
City	Hualien
Period	25/08/21 → 27/08/21

Keywords

GaN on SiC
VCO
X-band
class-E
power oscillator

Access to Document

10.1109/RFIT52905.2021.9565205

Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(2/3)
Chiou, H.
1/08/21 → 31/07/22
Project: Research

Cite this

Chuang, C. C., & Chiou, H. K. (2021). A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT52905.2021.9565205

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title = "A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology",

abstract = "This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN{\texttrademark} 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.",

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Chuang, CC & Chiou, HK 2021, A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. in 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 25/08/21. https://doi.org/10.1109/RFIT52905.2021.9565205

A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. / Chuang, Chih Cheng; Chiou, Hwann Kaeo.

2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chuang, Chih Cheng

AU - Chiou, Hwann Kaeo

PY - 2021/8/25

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N2 - This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

AB - This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

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KW - VCO

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KW - power oscillator

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ER -

Chuang CC, Chiou HK. A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). doi: 10.1109/RFIT52905.2021.9565205

A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Abstract

Publication series

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Keywords

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Projects

Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(2/3)

Cite this