A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology

Chih Cheng Chuang, Hwann Kaeo Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN™ 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665433914
DOIs
StatePublished - 25 Aug 2021
Event2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan
Duration: 25 Aug 202127 Aug 2021

Publication series

Name2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/TerritoryTaiwan
CityHualien
Period25/08/2127/08/21

Keywords

  • GaN on SiC
  • VCO
  • X-band
  • class-E
  • power oscillator

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