@inproceedings{1c0adb57921a423b823eaf55edff6ed7,
title = "A Low Phase Noise X Band Class e Power VCO in 0.25 μm GaN/SiC Technology",
abstract = "This paper presents an X-band tunable voltage controlled oscillator (VCO) using WIN{\texttrademark} 0.25 μ mGaN process. The power VCO was implemented by a class E power amplifier with positive feedback to generate an output power of 27.89 dBm at 9.4 GHz. The total power consumption is 2204 mW. The DC-to-RF conversion efficiency is 27.S9%. A source-drain connected GaN transistor was used as a varactor which provided the tuning frequencies from 9.348 to 9.46 GHz. The best measured phase noise is-121.62dBc/Hz at 1-MHz offset frequency. The FoMp and FoMposc are-195.49 and-223.38, respectively. The chip size includes all pads is 2× 1.5mm2.",
keywords = "GaN on SiC, VCO, X-band, class-E, power oscillator",
author = "Chuang, {Chih Cheng} and Chiou, {Hwann Kaeo}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; null ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2021",
month = aug,
day = "25",
doi = "10.1109/RFIT52905.2021.9565205",
language = "???core.languages.en_GB???",
series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
}