A low phase noise 52-GHz push-push VCO in 0.18-μm bulk CMOS technologies

Yi Hsien Cho; Ming Da Tsai; Hong Yeh Chang; Chia Chi Chang; Huei Wang

A low phase noise 52-GHz push-push VCO in 0.18-μm bulk CMOS technologies

Yi Hsien Cho, Ming Da Tsai, Hong Yeh Chang, Chia Chi Chang, Huei Wang

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

A V-Band fully integrated complementary push-push VCO is first presented in 0.18-μm bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBc/Hz at 26.3 GHz. To the author's best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-Band.

Original language	English
Article number	RMO2B-4
Pages (from-to)	131-134
Number of pages	4
Journal	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
State	Published - 2005
Event	2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States Duration: 12 Jun 2005 → 14 Jun 2005

Keywords

CMOS
Thin-film microstrip line
VCO

Cite this

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title = "A low phase noise 52-GHz push-push VCO in 0.18-μm bulk CMOS technologies",

abstract = "A V-Band fully integrated complementary push-push VCO is first presented in 0.18-μm bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBc/Hz at 26.3 GHz. To the author's best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-Band.",

keywords = "CMOS, Thin-film microstrip line, VCO",

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AU - Cho, Yi Hsien

AU - Tsai, Ming Da

AU - Chang, Hong Yeh

AU - Chang, Chia Chi

AU - Wang, Huei

PY - 2005

Y1 - 2005

N2 - A V-Band fully integrated complementary push-push VCO is first presented in 0.18-μm bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBc/Hz at 26.3 GHz. To the author's best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-Band.

AB - A V-Band fully integrated complementary push-push VCO is first presented in 0.18-μm bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBc/Hz at 26.3 GHz. To the author's best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-Band.

KW - CMOS

KW - Thin-film microstrip line

KW - VCO

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JF - Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

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Y2 - 12 June 2005 through 14 June 2005

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A low phase noise 52-GHz push-push VCO in 0.18-μm bulk CMOS technologies

Abstract

Keywords

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