A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating

Kuo Yu Lee; Yin Jung Chang; Jau Horng Chen

doi:10.1109/OECC48412.2020.9273624

A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating

Kuo Yu Lee, Yin Jung Chang, Jau Horng Chen

Department of Optics and Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.

Original language	English
Title of host publication	25th Opto-Electronics and Communications Conference, OECC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728154459
DOIs	https://doi.org/10.1109/OECC48412.2020.9273624
State	Published - 4 Oct 2020
Event	25th Opto-Electronics and Communications Conference, OECC 2020 - Taipei, Taiwan Duration: 4 Oct 2020 → 8 Oct 2020

Publication series

Name	25th Opto-Electronics and Communications Conference, OECC 2020

Conference

Conference	25th Opto-Electronics and Communications Conference, OECC 2020
Country/Territory	Taiwan
City	Taipei
Period	4/10/20 → 8/10/20

Keywords

CMOS process
Silicon avalanche photodiode
grating

Access to Document

10.1109/OECC48412.2020.9273624

Cite this

Lee, K. Y., Chang, Y. J., & Chen, J. H. (2020). A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating. In 25th Opto-Electronics and Communications Conference, OECC 2020 Article 9273624 (25th Opto-Electronics and Communications Conference, OECC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/OECC48412.2020.9273624

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abstract = "A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.",

keywords = "CMOS process, Silicon avalanche photodiode, grating",

author = "Lee, {Kuo Yu} and Chang, {Yin Jung} and Chen, {Jau Horng}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 25th Opto-Electronics and Communications Conference, OECC 2020 ; Conference date: 04-10-2020 Through 08-10-2020",

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Lee, KY, Chang, YJ & Chen, JH 2020, A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating. in 25th Opto-Electronics and Communications Conference, OECC 2020., 9273624, 25th Opto-Electronics and Communications Conference, OECC 2020, Institute of Electrical and Electronics Engineers Inc., 25th Opto-Electronics and Communications Conference, OECC 2020, Taipei, Taiwan, 4/10/20. https://doi.org/10.1109/OECC48412.2020.9273624

A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating. / Lee, Kuo Yu; Chang, Yin Jung; Chen, Jau Horng.
25th Opto-Electronics and Communications Conference, OECC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9273624 (25th Opto-Electronics and Communications Conference, OECC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chang, Yin Jung

AU - Chen, Jau Horng

PY - 2020/10/4

Y1 - 2020/10/4

N2 - A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.

AB - A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.

KW - CMOS process

KW - Silicon avalanche photodiode

KW - grating

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BT - 25th Opto-Electronics and Communications Conference, OECC 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th Opto-Electronics and Communications Conference, OECC 2020

Y2 - 4 October 2020 through 8 October 2020

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Lee KY, Chang YJ, Chen JH. A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating. In 25th Opto-Electronics and Communications Conference, OECC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9273624. (25th Opto-Electronics and Communications Conference, OECC 2020). doi: 10.1109/OECC48412.2020.9273624

A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating

Abstract

Publication series

Conference

Keywords

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