A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating

Kuo Yu Lee, Yin Jung Chang, Jau Horng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.

Original languageEnglish
Title of host publication25th Opto-Electronics and Communications Conference, OECC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728154459
DOIs
StatePublished - 4 Oct 2020
Event25th Opto-Electronics and Communications Conference, OECC 2020 - Taipei, Taiwan
Duration: 4 Oct 20208 Oct 2020

Publication series

Name25th Opto-Electronics and Communications Conference, OECC 2020

Conference

Conference25th Opto-Electronics and Communications Conference, OECC 2020
Country/TerritoryTaiwan
CityTaipei
Period4/10/208/10/20

Keywords

  • CMOS process
  • grating
  • Silicon avalanche photodiode

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