A low impact ionization rate poly-Si TFT with a current and electric field split design

Feng Tso Chien, Kuang Po Hsueh, Zhen Jie Hong, Kuan Ting Lin, Yao Tsung Tsai, Hsien Chin Chiu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this study, a novel low impact ionization rate (low-IIR) poly-Si thin film transistor featuring a current and electric field split (CES) structure with bottom field plate (BFP) and partial thicker channel raised source/drain (RSD) designs is proposed and demonstrated. The bottom field plate design can allure the electron and alter the electron current path to evade the high electric field area and therefore reduce the device IIR and suppress the kink effect. A two-dimensional device simulator was applied to describe and compare the current path, electric field magnitude distributions, and IIR of the proposed structure and conventional devices. In addition, the advantages of a partial thicker channel RSD design are present, and the leakage current of CES-thin-film transistor (TFT) can be reduced and the ON/OFF current ratio be improved, owing to a smaller drain electric field.

Original languageEnglish
Article number514
Issue number8
StatePublished - 1 Aug 2019


  • Current and electric field split (CES)
  • Field plate (FP)
  • Kink effect
  • Polycrystalline silicon (poly-Si)
  • Raised source/drain (RSD)
  • Thin-film transistor (TFT)


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