Abstract
A device architecture is proposed to improve the linearity of barium strontium titanate (BST) capacitors while maintaining the tunability and the quality factor. Thin-film parallel plate capacitors are fabricated utilizing the proposed architecture. The measurement results successfully demonstrate the effectiveness of this approach. Up to 14 dB of improvement on IIP3 is observed.
Original language | English |
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Article number | 4014960 |
Pages (from-to) | 560-563 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
DOIs | |
State | Published - 2006 |
Event | 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 11 Jun 2006 → 16 Jun 2006 |
Keywords
- Barium strontium titanate (BST)
- Ferroelectric
- Intermodulation distortion
- Linearity
- Tunable capacitor