A Ku-band low phase noise wide tuning range voltage controlled oscillator using 2-μm GaAs HBT process

Chi Hsien Lin, Shou Hsien Weng, Kung Hao Liang, Hong Yeh Chang, Yi Jen Chan, Chau Ching Chiong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, a Ku-band low phase noise wide tuning range voltage controlled oscillator (VCO) using a 2-μm GaAs heterojunction bipolar transistor (HBT) technology is presented. A common-emitter (CE) topology with an inductor-capacitor (LC) feedback network is utilized in the circuit design, and the VCO demonstrates a low phase noise of-112.5 dBc/Hz at 1-MHz offset carrier frequency. The tuning frequency is from 14.6 to 16.6 GHz with a maximum output power of 6.9 dBm. The overall dc power consumption of the VCO is only 25 mW with a dc supply voltage of 2 V. The chip size of the VCO is 1×1 mm 2. To the authors' best knowledge, this work demonstrates the lowest figure-of-merit (FOM) among all the reported Ku-band GaAs-based VCOs.

Original languageEnglish
Title of host publication2007 Asia-Pacific Microwave Conference, APMC
DOIs
StatePublished - 2007
EventAsia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand
Duration: 11 Dec 200714 Dec 2007

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2007
Country/TerritoryThailand
CityBangkok
Period11/12/0714/12/07

Keywords

  • GaAs
  • HBT
  • Low phase noise
  • VCO
  • Wide tuning range

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