A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers

Shih Hao Lai, Wei Cheng Chen, Jung Chou, Yong Le Wang, Yu Chia Su, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a Ka-band low-noise high-gain frontend receiver in monolithic enhancement-mode PINHEMT technology. The presented receiver comprises a single-pole double-Throw (SPDT) switch, a low-noise amplifier (LNA), and a power detector. The SPDT is designed using quarter-wavelength transmission lines with PIN diodes and features low insertion loss and high isolation. The LNA consists of three gain stages based on HEMT, and it has a low noise figure and high gain. The power detector is based on a square-law detection and features high responsivity (RV) and low noise-equivalent power (NEP). The receiver achieves a minimum NEP of 1.2 fW/√Hz at 33 GHz with a peak RV of 4 MV/W, and a 3-dB bandwidth of 2.6 GHz. This work is suitable for a few millimeter-wave radiometers due to its superior performance and high integration.

Original languageEnglish
Title of host publication2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages53-55
Number of pages3
ISBN (Electronic)9798350324402
DOIs
StatePublished - 2023
Event2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 - Cairns, Australia
Duration: 14 Aug 202316 Aug 2023

Publication series

Name2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023

Conference

Conference2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
Country/TerritoryAustralia
CityCairns
Period14/08/2316/08/23

Keywords

  • GaAs
  • HEMT
  • low noise
  • millimeter-wave
  • MMIC
  • PIN diode
  • receiver

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