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Abstract
This paper presents a Ka-band low-noise high-gain frontend receiver in monolithic enhancement-mode PINHEMT technology. The presented receiver comprises a single-pole double-Throw (SPDT) switch, a low-noise amplifier (LNA), and a power detector. The SPDT is designed using quarter-wavelength transmission lines with PIN diodes and features low insertion loss and high isolation. The LNA consists of three gain stages based on HEMT, and it has a low noise figure and high gain. The power detector is based on a square-law detection and features high responsivity (RV) and low noise-equivalent power (NEP). The receiver achieves a minimum NEP of 1.2 fW/√Hz at 33 GHz with a peak RV of 4 MV/W, and a 3-dB bandwidth of 2.6 GHz. This work is suitable for a few millimeter-wave radiometers due to its superior performance and high integration.
Original language | English |
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Title of host publication | 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 53-55 |
Number of pages | 3 |
ISBN (Electronic) | 9798350324402 |
DOIs | |
State | Published - 2023 |
Event | 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 - Cairns, Australia Duration: 14 Aug 2023 → 16 Aug 2023 |
Publication series
Name | 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 |
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Conference
Conference | 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 |
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Country/Territory | Australia |
City | Cairns |
Period | 14/08/23 → 16/08/23 |
Keywords
- GaAs
- HEMT
- MMIC
- PIN diode
- low noise
- millimeter-wave
- receiver
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