@inproceedings{133400df62494d1098a776bf9868090a,
title = "A ka-band broadband active frequency doubler using CB-CE balanced configuration in 0.18 μm SiGe BiCMOS process",
abstract = "A Ka-band broadband frequency doubler in a 0.18 μm SiGe BiCMOS technology is presented in this paper. The frequency doubler employs a configuration of a common-base (CB)/common-emitter (CE) pair to enhance the second harmonic efficiently. This frequency doubler features a conversion gain of higher than {\texttrademark}7 dB with an input power of 5 dBm between 26 and 40 GHz. The maximum output 1-dB compression point (P 1dB) is 4.3 dBm and the output saturation power (P sat) is higher than 5 dBm at 31 GHz. The overall chip size is 0.85×0.66 mm 2. To the best of the author's knowledge, this work demonstrates the first SiGe-based frequency doubler using CB-CE configuration with good output power and good figure-of-merit (FOM) covering the entire Ka band.",
keywords = "Frequency doubler, Ka-band, SiGe BiCMOS",
author = "Chen, {Guan Yu} and Yeh, {Yen Liang} and Chang, {Hong Yeh} and Hsin, {Yue Ming}",
year = "2012",
doi = "10.1109/MWSYM.2012.6258269",
language = "???core.languages.en_GB???",
isbn = "9781467310871",
series = "IEEE MTT-S International Microwave Symposium Digest",
booktitle = "IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium",
note = "2012 IEEE MTT-S International Microwave Symposium, IMS 2012 ; Conference date: 17-06-2012 Through 22-06-2012",
}