A ka-band broadband active frequency doubler using CB-CE balanced configuration in 0.18 μm SiGe BiCMOS process

Guan Yu Chen, Yen Liang Yeh, Hong Yeh Chang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

A Ka-band broadband frequency doubler in a 0.18 μm SiGe BiCMOS technology is presented in this paper. The frequency doubler employs a configuration of a common-base (CB)/common-emitter (CE) pair to enhance the second harmonic efficiently. This frequency doubler features a conversion gain of higher than ™7 dB with an input power of 5 dBm between 26 and 40 GHz. The maximum output 1-dB compression point (P 1dB) is 4.3 dBm and the output saturation power (P sat) is higher than 5 dBm at 31 GHz. The overall chip size is 0.85×0.66 mm 2. To the best of the author's knowledge, this work demonstrates the first SiGe-based frequency doubler using CB-CE configuration with good output power and good figure-of-merit (FOM) covering the entire Ka band.

Original languageEnglish
Title of host publicationIMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs
StatePublished - 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: 17 Jun 201222 Jun 2012

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
Country/TerritoryCanada
CityMontreal, QC
Period17/06/1222/06/12

Keywords

  • Frequency doubler
  • Ka-band
  • SiGe BiCMOS

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