A Ka-Band Asymmetric T/R Switch in GaAs pHEMT Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The design of an asymmetric T/R switch for the upper Ka band is presented. In particular, how to compensate for the effect of the parasitics to achieve proper matching in the millimeter-wave regime is described. To be specific, a shunt short stub is added at the antenna port to resonate with the unwanted parasitic shunt capacitance of the TX path to improve the return losses. The proposed asymmetric T/R switch is implemented in WIN 0.15-µm GaAs pHEMT technology. The chip area is 1×1 mm2. Measurement results show that, from 35 to 40 GHz, the insertion loss is less than 0.9 dB and the TX-to-RX isolation is greater than 15.0 dB in the TX mode.

Original languageEnglish
Title of host publication2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages613-614
Number of pages2
ISBN (Electronic)9798350324174
DOIs
StatePublished - 2023
Event2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Pingtung, Taiwan
Duration: 17 Jul 202319 Jul 2023

Publication series

Name2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings

Conference

Conference2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023
Country/TerritoryTaiwan
CityPingtung
Period17/07/2319/07/23

Keywords

  • asymmetric
  • GaAs pHEMT
  • Ka band
  • T/R switch

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