@inproceedings{8db8aaa6966447018da14b1eaa2ba391,
title = "A Ka-Band Asymmetric T/R Switch in GaAs pHEMT Technology",
abstract = "The design of an asymmetric T/R switch for the upper Ka band is presented. In particular, how to compensate for the effect of the parasitics to achieve proper matching in the millimeter-wave regime is described. To be specific, a shunt short stub is added at the antenna port to resonate with the unwanted parasitic shunt capacitance of the TX path to improve the return losses. The proposed asymmetric T/R switch is implemented in WIN 0.15-µm GaAs pHEMT technology. The chip area is 1×1 mm2. Measurement results show that, from 35 to 40 GHz, the insertion loss is less than 0.9 dB and the TX-to-RX isolation is greater than 15.0 dB in the TX mode.",
keywords = "GaAs pHEMT, Ka band, T/R switch, asymmetric",
author = "Fu, {Jia Shiang}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 ; Conference date: 17-07-2023 Through 19-07-2023",
year = "2023",
doi = "10.1109/ICCE-Taiwan58799.2023.10226683",
language = "???core.languages.en_GB???",
series = "2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "613--614",
booktitle = "2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings",
}