A Ka-band 35-dBm P0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection

Jung Chou; Wei Cheng Chen; Yong Le Wang; Yi Fu Chen; Hong Yeh Chang

doi:10.1109/IMS37964.2023.10188064

A Ka-band 35-dBm P_0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection

Jung Chou, Wei Cheng Chen, Yong Le Wang, Yi Fu Chen, Hong Yeh Chang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, a Ka-band monolithic high-power low-loss single-port double-throw (SPDT) switch is proposed using a GaAs PIN process. The switch is designed using an innovative anti-series diode connection to significantly enhance 1-dB compression point, since the turned-on issue of the diode can be effectively resolved under high-power driving. Between 25 and 30 GHz, the proposed SPDT switch features a measured insertion loss of within 1.2 dB, an isolation of higher than 20 dB, and an input 0.1-dB compression point (P0.1dB) of higher than 35 dBm. As compared with prior art, this work is suitable for high-power applications in microwave and millimeter-wave bands due to its superior performance and compact chip size.

Original language	English
Title of host publication	2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1112-1115
Number of pages	4
ISBN (Electronic)	9798350347647
DOIs	https://doi.org/10.1109/IMS37964.2023.10188064
State	Published - 2023
Event	2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 - San Diego, United States Duration: 11 Jun 2023 → 16 Jun 2023

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2023-June
ISSN (Print)	0149-645X

Conference

Conference	2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
Country/Territory	United States
City	San Diego
Period	11/06/23 → 16/06/23

Keywords

Diode
GaAs
microwave and millimeter-wave (mm-wave)
PIN
switch

Access to Document

10.1109/IMS37964.2023.10188064

使用異質整合積體電路技術之下世代毫米波通訊收發機研究(2/3)
Chang, H.-Y. (PI)
1/08/22 → 31/07/23
Project: Research

Cite this

Chou, J., Chen, W. C., Wang, Y. L., Chen, Y. F., & Chang, H. Y. (2023). A Ka-band 35-dBm P_0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection. In 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 (pp. 1112-1115). (IEEE MTT-S International Microwave Symposium Digest; Vol. 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS37964.2023.10188064

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title = "A Ka-band 35-dBm P0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection",

abstract = "In this paper, a Ka-band monolithic high-power low-loss single-port double-throw (SPDT) switch is proposed using a GaAs PIN process. The switch is designed using an innovative anti-series diode connection to significantly enhance 1-dB compression point, since the turned-on issue of the diode can be effectively resolved under high-power driving. Between 25 and 30 GHz, the proposed SPDT switch features a measured insertion loss of within 1.2 dB, an isolation of higher than 20 dB, and an input 0.1-dB compression point (P0.1dB) of higher than 35 dBm. As compared with prior art, this work is suitable for high-power applications in microwave and millimeter-wave bands due to its superior performance and compact chip size.",

keywords = "Diode, GaAs, microwave and millimeter-wave (mm-wave), PIN, switch",

author = "Jung Chou and Chen, {Wei Cheng} and Wang, {Yong Le} and Chen, {Yi Fu} and Chang, {Hong Yeh}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

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Chou, J, Chen, WC, Wang, YL, Chen, YF & Chang, HY 2023, A Ka-band 35-dBm P_0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection. in 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023. IEEE MTT-S International Microwave Symposium Digest, vol. 2023-June, Institute of Electrical and Electronics Engineers Inc., pp. 1112-1115, 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023, San Diego, United States, 11/06/23. https://doi.org/10.1109/IMS37964.2023.10188064

A Ka-band 35-dBm P_0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection. / Chou, Jung; Chen, Wei Cheng; Wang, Yong Le et al.
2023 IEEE/MTT-S International Microwave Symposium, IMS 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 1112-1115 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2023-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, a Ka-band monolithic high-power low-loss single-port double-throw (SPDT) switch is proposed using a GaAs PIN process. The switch is designed using an innovative anti-series diode connection to significantly enhance 1-dB compression point, since the turned-on issue of the diode can be effectively resolved under high-power driving. Between 25 and 30 GHz, the proposed SPDT switch features a measured insertion loss of within 1.2 dB, an isolation of higher than 20 dB, and an input 0.1-dB compression point (P0.1dB) of higher than 35 dBm. As compared with prior art, this work is suitable for high-power applications in microwave and millimeter-wave bands due to its superior performance and compact chip size.

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